網(wǎng)站介紹 關(guān)于我們 聯(lián)系方式 友情鏈接 廣告業(yè)務(wù) 幫助信息
1998-2022 ChinaKaoyan.com Network Studio. All Rights Reserved. 滬ICP備12018245號
基本情況:
鄧軍,男,1969年出生,博士,副研究員,碩士生導(dǎo)師。
2006年于北京工業(yè)大學(xué)電子信息與控制工程學(xué)院獲得工學(xué)博士學(xué)位。主要在半導(dǎo)體光電子器件領(lǐng)域從事光電探測器件與材料外延制備的科研和教學(xué)工作。工作期間,先后參與、承擔(dān)國家973、國家863項(xiàng)目、北京市科委、教委項(xiàng)目以及企業(yè)科研項(xiàng)目十幾項(xiàng),在國內(nèi)外會議、期刊發(fā)表學(xué)術(shù)論文四十余篇。
研究方向:
1、III-V族半導(dǎo)體功能材料的外延制備技術(shù)
2、半導(dǎo)體光電子器件研究和制備
3、半導(dǎo)體光電子器件的應(yīng)用
在研的課題:
1、GaAs/AlGaAs多量子阱中長波紅外探測器陣列器件
2、InAs/GaSbII類超晶格雙色紅外探測器研究
3、InP基焦平面陣列探測器研制
4、高增益垂直腔面發(fā)射激光器的研制
5、石墨烯材料與器件
代表性論文:
1.Jun Deng, Guangdi Shen, Peng Lian, Songyan Liu, Lan Li, Yanli Shi, Junmiao Wu, Nanhui Niu, Deshu Zou,Optoelectronic transport mechanism from subband infrared absorption and tunneling regeneration,Current Applied Physics 2002 2:373-378
2.Deng jun、Wang bin、Han jun、Li jianjun、Shen guangdi,GaAs/AlGaAs Quantum Well Infrared Photodetector with Low Noise,Opto-Electronics Letters, 2005,Vol.1,No.1 37-39
3.Ma Nan, Deng Jun, Li Dingyuan, Shi Yanli, Shen Guangdi. Accessing the epitaxy structure of quantum well infrared photodetectors by photoluminescence measurement. International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications. Proceedings of the SPIE. 2009, 7383:738332-738332-8
4.Dingyuan Li, Jun Deng, Nan Ma, et al,Analysis of carriers transport of novel GaAs/AlGaAs quantum well infrared Photodetectors, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications. Proceedings of the SPIE. 2009, 7383:738310-738310-8
5.Shaojun Luo,Jun Deng,Jianjun Li,Linchun Gao,Rui Chen,Jun Han,The influence of the growth temperature on the doping characteristics of P-GaP layers in AlGaInP red LED,Proceedings 2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics (AOM 2010)
6.Lin-chun Gao,Jun Deng,Shao-jun Luo,Rui Chen1,Jian-jun Li,Jun Han,Study of P type doping in AlGaInP cladding layer of high brightness red LED,Proceedings 2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics (AOM 2010)
7.YANG Li-peng, DENG Jun*, SHI Yan-li, CHEN Yong-yuan, WU Bo,F(xiàn)abrication and performance of InAs/GaSb type-II superlattices Mid-wavelength infrared detectors,Proc.of SPIE Vol. 8907, 890741,International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications
聯(lián)系方式:
電話:01067392503-817
郵箱:dengsu@bjut.edu.cn
來源未注明“中國考研網(wǎng)”的資訊、文章等均為轉(zhuǎn)載,本網(wǎng)站轉(zhuǎn)載出于傳遞更多信息之目的,并不意味著贊同其觀點(diǎn)或證實(shí)其內(nèi)容的真實(shí)性,如涉及版權(quán)問題,請聯(lián)系本站管理員予以更改或刪除。如其他媒體、網(wǎng)站或個(gè)人從本網(wǎng)站下載使用,必須保留本網(wǎng)站注明的"稿件來源",并自負(fù)版權(quán)等法律責(zé)任。
來源注明“中國考研網(wǎng)”的文章,若需轉(zhuǎn)載請聯(lián)系管理員獲得相應(yīng)許可。
聯(lián)系方式:chinakaoyankefu@163.com
掃碼關(guān)注
了解考研最新消息
網(wǎng)站介紹 關(guān)于我們 聯(lián)系方式 友情鏈接 廣告業(yè)務(wù) 幫助信息
1998-2022 ChinaKaoyan.com Network Studio. All Rights Reserved. 滬ICP備12018245號