1、研究方向

早期從事研究包括：1化學(xué)液相淀積法制備硅襯底上的氧化硅、氧化鋁薄膜；2液相外延法生長鋁鎵砷微探尖；3分子束外延生長低密度自組織銦砷/鎵砷、銦砷/鋁砷量子點及其光學(xué)性質(zhì)；4半導(dǎo)體量子點共振隧穿二極管；5銦磷基三端彈道結(jié)器件及其在混頻、鑒相中的應(yīng)用；6集成平面內(nèi)柵晶體管在RS觸發(fā)器中的應(yīng)用；7集成三端彈道結(jié)在RS觸發(fā)器中的應(yīng)用；8柵控兩維電子氣量子點（單點、雙點）在單電子晶體管及電荷檢測中的應(yīng)用；9原子層淀積高k氧化鉿薄膜及其在磷化銦襯底上制備的憶阻器、憶容器。

目前研究方向為：1化學(xué)氣相淀積法制備大面積石墨烯材料，包括新型催化生長以及非催化生長等；2石墨烯在氮化鎵等半導(dǎo)體材料以及柔性襯底上做光電器件的透明電極應(yīng)用；3石墨烯在納米電子學(xué)中的應(yīng)用。

2、科研成果

發(fā)表論文、專著60余項，其中被ISIWebofScience收錄的50余項，h-因子為11。部分成果選列如下:

1.K. Xu, C. Xu, J. Deng, Y. Zhu, W. Guo, M. Mao, L. Zheng, J. Sun, “Graphene transparent electrodes grown by rapid chemical vapor deposition with ultrathin indium tin oxide contact layers for GaN light emitting diodes”, Applied Physics Letters, 102 (2013) 162102.

2.C. J. L. de la Rosa, J. Sun, N. Lindvall, M. T. Cole, Y. Nam, M. Löffler, E. Olsson, K. B. K. Teo, A. Yurgens, “Frame assisted H2O electrolysis induced H2 bubbling transfer of large area graphene grown by chemical vapor deposition on Cu”, Applied Physics Letters, 102 (2013) 022101.

3.J. Sun, “A lithographic resist-based simple technology for high yield microfabrication of air bridges”, Journal of Microelectromechanical Systems, 21 (2012) 1285.

4.J. Sun, M. T. Cole, N. Lindvall, K. B. K. Teo, A. Yurgens, “Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes”, Applied Physics Letters, 100 (2012) 022102.

5.J. D. Buron, D. H. Petersen, P. Bøggild, D. G. Cooke, M. Hilke, J. Sun, E. Whiteway, P. F. Nielsen, O. Hansen, A. Yurgens, P. U. Jepsen, “Graphene conductance uniformity mapping”, Nano Letters, 12 (2012) 5074.

6.J. Sun, N. Lindvall, M. T. Cole, K. T. T. Angel, T. Wang, K. B. K. Teo, D. H. C. Chua, J. Liu, A. Yurgens, “Low partial pressure chemical vapor deposition of graphene on copper”, IEEE Transactions on Nanotechnology 11 (2012) 255.

7.Y. F. Fu, B. Carlberg, N. Lindahl, N. Lindvall, J. Bielecki, A. Matic, Y. X. Song, Z. L. Hu, Z. H. Lai, L. L. Ye, J. Sun, Y. H. Zhang, Y. Zhang, J. Liu, “Templated growth of covalently bonded three-dimensional carbon nanotube networks originated from graphene”, Advanced Materials 24 (2012) 1576.

8.J. Sun, N. Lindvall, M. T. Cole, K. B. K. Teo, A. Yurgens, “Large-area uniform graphene-like thin films grown by chemical vapor deposition directly on silicon nitride”, Applied Physics Letters, 98 (2011) 252107.

9.J. Sun, E. Lind, I. Maximov, H. Q. Xu, “Memristive and memcapacitive characteristics of a Au/Ti-HfO2-InP/InGaAs Diode”, IEEE Electron Device Letters, 32 (2011) 131.

10.J. Sun, D. Wallin, I. Maximov, H. Q. Xu, “A novel SR latch device realized by integration of three-terminal ballistic junctions in InGaAs/InP”, IEEE Electron Device Letters 29 (2008) 540.

3、邀請報告選列

1.2011年3月2日，應(yīng)丹麥技術(shù)大學(xué)Peter Bøggild教授邀請赴丹麥做 “Copper catalyzed chemical vapor deposition of graphene”的專場報告，級別為Nanotech Institute Colloquium.

2.2011年5月9日，應(yīng)首爾國立大學(xué)Yung Woo Park教授邀請赴韓國做“Copper catalyzed chemical vapor deposition of graphene”的報告，級別為the International Symposium on Carbon Electronics (ISCE).

4、電子郵件

albertjefferson@sohu.com 或 jie.sun@bjut.edu.cn。