個(gè)人簡(jiǎn)介

蓋艷琴，女，1980年3月出生于山東海陽，中國(guó)礦業(yè)大學(xué)理學(xué)院副教授，博士研究生。多年來一直從事寬帶隙半導(dǎo)體材料摻雜改性的理論研究，發(fā)表包括PRL,PRB,APL,JPCC等SCI論文十多篇，主持國(guó)家自然科學(xué)基金兩項(xiàng)(現(xiàn)已結(jié)題)。

Email：yqgai@cumt.edu.cn

研究領(lǐng)域

寬帶隙半導(dǎo)體材料摻雜改性的理論研究

科研項(xiàng)目

1、主持 國(guó)家自然科學(xué)基金—科學(xué)部主任專項(xiàng)基金項(xiàng)目“能帶調(diào)控提高ZnOp型摻雜效率的理論研究”(11047130)

2、主持 國(guó)家自然科學(xué)基金—青年科學(xué)基金項(xiàng)目“晶格缺陷在ZnO基d0鐵磁體中所起作用的理論研究”(11104345)

3、主持 中國(guó)礦業(yè)大學(xué)青年科研基金 項(xiàng)目“半導(dǎo)體合金Zn1-xBexO中缺陷和摻雜的理論研究”(2009A047)

4、主持 中國(guó)礦業(yè)大學(xué)“啟航計(jì)劃”科研基金項(xiàng)目“半導(dǎo)體合金Zn1-xBexO中缺陷和摻雜的理論研究”

5、主持 中國(guó)礦業(yè)大學(xué)教育部“理科專項(xiàng)基金”項(xiàng)目“晶格缺陷對(duì)ZnO中磁性影響的理論研究” (2010LKWL03)

6、參與 國(guó)家重大基礎(chǔ)研究計(jì)劃(973)子課題項(xiàng)目“ZnO的能帶、摻雜與極化的理論研究” (2011CB302003-1)

發(fā)表論文

1. Yanqin Gai, Jingbo Li, Shu-Shen Li, et al. Design of Narrow-Gap TiO2: A Passivated Codoping Approach for Enhanced Photoelectrochemical Activity. Physics Review Letter, 2009, 102, 036402.

2. Yanqin Gai, Jingbo Li, Shu-Shen Li, et al., Design of shallow acceptors in ZnO through novel compensated donor-acceptor complexes: A density functional calculation. Physical Review B，2009, 80, 153201.

3. Yanqin Gai, Haowei Peng, and Jingbo Li, Electronic Properties of Nonstoichiometric PbSe Quantum Dots from First Principles. Journal of Physical Chemistry C, 2009, 113 (52): 21506-21511.

4. Y. Q. Gai, B. Yao, Z. P. Wei, et al. Effect on nitrogen acceptor as Mg is alloyed into ZnO. Applied Physics Letters, 2008, 92, 062110.

5.Yanqin Gai, Jingbo Li, Bin Yao, and Jian-Bai Xia. The bipolar doping of ZnS via native defects and external dopants. Journal of Applied Physics, 2009, 105, 113704.

6. Y. Q. Gai，B. Yao，Y. F. Li，et al, Inffuence of hydrostatic pressure on the native point defects in wurtzite ZnO: Ab initio calculation. Physics Letters A, 2008, 372 (30), 5077.

7. Y. Q. Gai，B. Yao, Y. M. Lu, et al. Electronic and optical properties of ZnO thin film under in-plane biaxial strains: Ab initio calculation. Physics Letters A, 2007, 372, Issue 1, 72.

8. Yanqin Gai, Jingbo Li, et al., Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations. J. Phys. D: Appl. Phys. 2009, 42 155403.

9.Ping Ma, Yanqin Gai, Junxi Wang, et al. Enhanced electroluminescence intensity of InGaN/GaN Multi-quantum-wells based on Mg-doped GaN annealed in O2. Applied Physics Letters, 2008, 93,102112. 【本人為通訊作者】

教學(xué)活動(dòng)

承擔(dān)《大學(xué)物理A(1)》，《大學(xué)物理A(2)》及《大學(xué)物理B》的本科教學(xué)工作。