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李國慶,男,漢族,1969年生于遼寧建平。中共黨員,教授,碩士生導(dǎo)師。重慶市級物理實(shí)驗(yàn)教學(xué)示范中心主任。重慶市物理學(xué)會(huì)理事。東北師范大學(xué)物理專業(yè)本科(1991年),東北大學(xué)凝聚態(tài)物理專業(yè)碩士(1997年),東北大學(xué)材料物理與化學(xué)專業(yè)博士(2000年)。曾先后赴日本材料科學(xué)研究所(NIMS,筑波)、秋田大學(xué)(秋田)、東北大學(xué)金屬材料研究所(仙臺(tái))進(jìn)行博士后研究。目前主要承擔(dān)本科生《固體物理》、《近代物理實(shí)驗(yàn)》,研究生《固體理論》等課程的教學(xué)任務(wù)。
主要從事納米磁性顆粒、磁存貯介質(zhì)等方面的研究工作。微磁學(xué)和微納磁電子學(xué)是當(dāng)前納米技術(shù)應(yīng)用于磁學(xué)領(lǐng)域的熱點(diǎn)學(xué)科。陣列超高面密度垂直磁記錄介質(zhì)和磁性隧道結(jié)代表了磁現(xiàn)象的當(dāng)前應(yīng)用發(fā)展方向。
在國內(nèi)外學(xué)術(shù)刊物上發(fā)表學(xué)術(shù)論文40余篇。目前在研省部以上科研課題3項(xiàng)。
聯(lián)系郵箱:gqli@swu.edu.cn
通訊地址:重慶市北碚區(qū)西南大學(xué)物理科學(xué)與技術(shù)學(xué)院 400715
在研主持項(xiàng)目
(01) 鐵鉑銠鑲嵌式磁記錄介質(zhì)及其反鐵磁-鐵磁相變的自旋動(dòng)力學(xué)
國家自然科學(xué)基金(51071132),39萬,2011.01-2013.12
(02) 垂直磁化MTJ的自旋轉(zhuǎn)距效應(yīng)
重慶市自然科學(xué)基金(CSTC2009BB8102),3萬,2009.08-2012.07
(03) 垂直磁隧道結(jié)自旋轉(zhuǎn)矩效應(yīng)
中央高;究蒲匈M(fèi)(XDJK2009C193),4萬,2010.01-2012.12
已完成主持項(xiàng)目
(01) 新型CMR單晶磁性相變的研究,3萬
遼寧省科委博士啟動(dòng)基金(2001102016),2002.01- 2004.12
(02) 超微磁性粒子的取向及粒徑控制,2萬
重慶市自然科學(xué)基金(CSTC2006BB4326),2006.08-2008.07
(03) 垂直取向磁性納米粒子的生長與物性調(diào)節(jié),15萬
西南大學(xué)博士基金(SWUB2006031),2007.01-2008.12
發(fā)表的代表性論文
01. Accelerating the L10 ordering transition of FePt(001) nanograins using composite buffer layers
G Q Li, Y P Zheng, K Hayashi, K Takanashi
Appl. Phys. Lett. 99(2011) 043108(1-3).
02. Morphology and domain pattern of L10 ordered FePt films
G Q Li, H Takahoshi, H Ito, H Saito, S Ishio, T Shima, K Takanashi
J. Appl. Phys. 94(2003) 5672-5677.
03. Structural transition from L10 phase to A1 phase in FePt films caused by ion irradiation
T Hasegawa, G Q Li, W L Pei, H Saito, S Ishio, K Taguchi, K Yamakawa, N Honda, K Ouchi, T Aoyama, I Sato
J. Appl. Phys. 99(2006) 053505(1-6).
04. Simultaneous magnetic force microscopy imaging of perpendicular and in-plane magnetic field gradient on La0.7Sr0.3MnO3 granular film with in-plane magnetization
Z H Li, G Egawa, S Yoshimura, G Q Li, H Asano, H Saito
J. Appl. Phys. 109(2011) 07D334(1-3).
05. Magnetic force microscopy imaging of in-plane magnetic field gradient using transient oscillation
H Saito, G Egaw, S Ishio, G Q Li
J. Appl. Phys. 103 (2008) 07D921(1-3).
06. Phenomenological analysis of magnetization reversal process for L10-FePt(001) particulate films
D L Wang, T Seki, K Takanashi, T Shima, G Q Li, H Saito, S Ishio
J. Appl. Phys. 105(2009) 07A702(1-3).
07. Nucleation-type magnetization behavior in FePt (001) particulate films
T Shima, K Takanashi, Y K Takahashi, K Hono, G Q Li , S Ishio
J. Appl. Phys. 99(2006) 033516(1-5).
08. Dot size dependence of magnetic properties in microfabricated L10-FePt (001) and L10-FePt (110) dot arrays
T Seki, T Shima, K Yakushiji, K Takanashi, G Q Li, S Ishio
J. Appl. Phys. 100 (2006) 043915(1-8).
09. Strain-driven formation of rubrene crystalline films on Bi(001)
M Lan, Z Xiong, G Q Li, T N Shao, J L Xie, X F Yang, J Z Wang, Y Liu
Phys. Rev. B 83(2011) 195322(1-5).
10. STM study of a rubrene monolayer on Bi(001): structural modulations
J Z Wang, M Lan, T N Shao, G Q Li, Y Zhang, C Z Huang, Z H Xiong, X C Ma, J F Jia, Q K Xue
Phys. Rev. B 83(2011) 235433(1-4).
11. Influence of silicon dioxide doping on morphology of silicon nanowires grown by floating zone method
G Q Li, Q L Hu, H ARAKI, H Suzuki, W Yang, T Noda
Jpn. J. Appl. Phys. 41 (2002) Part 1 7272-7275
12. In situ growth of isotopically enriched 28Si nanowires using the floating-zone (FZ) melting method
Q L Hu, G Q Li, H Suzuki, H Araki, T Noda
Jpn. J. Appl. Phys. 41 (2002) Part 2 L7-L9.
13. A new phenomenon in the floating-zone (FZ) growth of Si nanowires
Q L Hu, G Q Li, H Suzuki, H Araki, N Ishikawa, W Yang, T Noda
J. Crystal Growth 246 (2002) 64-68.
14. Spin freezing phenomenon and transport properties in La1/3Nd1/3Ba1/3MnO3
G Q Li, Z Xianyu, C O Kim, H J Kim, Y W Lee
J. Magn. Magn. Mater. 239(2002) 51-53.
15. Mechanism of magnetization process of island-like L10 FePt films
G Q Li, H Takahoshi, H Ito, T Washiya, H Saito, S Ishio, T Shima, K Takanashi
J. Magn. Magn. Mater. 287(2005) 219-223.
16. Anomalous magnetization processes and non-symmetrical domain wall displacements in L10 FePt particulate films
G Q Li, H Saito, S Ishio, T Shima, K Takanashi
J. Magn. Magn. Mater. 303(2006) 14-19.
17. Morphology and domain pattern of epitaxially grown L10 FePt elongated particles
G Q Li, H Saito, S Ishio, T Shima, K Takanashi, Z H Xiong
J. Magn. Magn. Mater. 319(2007) 73-79.
18. Asymmetric initial magnetization process of elongated particles in nucleation-type L10 FePt films
G Q Li, H Saito, S Ishio, T Shima, K Takanashi, Z H Xiong
J. Magn. Magn. Mater. 315(2007) 126-131.
19. Domain structure movement in L10 FePt islands observed by in situ MFM
S Ishio, G Q Li, H Takahoshi, H Ito, H Saito, T Shima, K Takanashi
J. Magn. Magn. Mater. 272-276(2004) e819-e821.
20. High coercivity and magnetic domain observation in epitaxially grown particulate FePt thin flms
T Shima, K Takanashi, Y K Takahashi, K Hono, G Q Li, S Ishio
J. Magn. Magn. Mater. 266(2003) 171-177.
21. Improvement of hard magnetic properties in microfabricated L10-FePt dot arrays upon post-annealing
T Seki, T Shima, K Yakushiji, K Takanashi, G Q Li, S Ishio
IEEE Trans. Magn. 41 (2005) 3604-3606.
22. Dot size dependence of magnetization reversal process in L10-FePt dot arrays
D L Wang, T Seki, K Takanashi, T Shima, G Q Li, H Saito, S Ishio
IEEE Trans. Magn. 44(2008) Part 2 3464-3467.
23. Microstructure and magnetic properties for highly coercive FePt sputtered films
T Shima, K Takanashi, G Q Li, S Ishio
Mater. Trans. 44 (2003) 1508-1513.
24. Micromagnetic simulations of magnetization reversal of iron nanowire
H Xiang, D M Jiang, J C Yao, Y P Zheng, W Lu, G Q Li, H Saito, S Ishio, X W Tan, Y Q Lin
J. Phys. Conf. Ser. 266(2011) 012022(1-5).
25. Continuity of perpendicular FePt film with a compositional gradient design
X J Mo, H Xiang, W Lu, Y P Zheng, G Q Li, H Saito, S Ishio, D M Jiang, X W Tan, Y Q Lin
J. Phys. Conf. Ser. 266(2011) 012040(1-5).
26. Magnetic properties of iron films on anodized aluminum underlayer
H Xiang, Y Zhang, J C Yao, X J Mo, G Q Li, H Saito
J. Phys. Conf. Ser. 266(2011) 012048(1-4).